SUM90N04 Datasheet, PDF (5/8 Pages) Vishay Telefunken – N-Channel 40 V (D-S) MOSFET

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SUM90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
1000
Limited by R_DS(on)*
100
T_J = 25 °C
10
T_J = 150 °C
1
0.00001
0.0001
0.001
0.01
0.1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
100 μs
10
1 ms
10 ms
100 ms, 1 s
1
10 s, DC
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63397.
S13-2462-Rev. B, 02-Dec-13
5
Document Number: 63397
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000