SUM90N04 Datasheet, PDF (1/8 Pages) Vishay Telefunken – N-Channel 40 V (D-S) MOSFET

www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () MAX.
0.0033 at V_GS = 10 V
40
0.0041 at V_GS = 4.5 V
I_D (A) ^d
90
90
Q_g (TYP.)
87
TO-263
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
D
- Secondary synchronous rectification
• DC/DC converter
• Power tools
G
Top View
S
D
G
Ordering Information: 
SUM90N04-3m3P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
T_C = 25 °C
T_C = 70 °C
Avalanche Current
Single Avalanche Energy ^a
L = 0.1 mH
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_A = 25 °C ^c
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
40
± 20
90 ^d
90 ^d
160
60
180
125 ^b
3.1
-55 to 150
S
N-Channel MOSFET
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) ^c
Junction-to-Case (Drain)
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
SYMBOL
R_thJA
R_thJC
LIMIT
40
1
UNIT
°C/W
S13-2462-Rev. B, 02-Dec-13
1
Document Number: 63397
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000