SI7748DP Datasheet, PDF (5/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
75
Si7748DP
Vishay Siliconix
60
Package Limited
45
30
15
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
70
2.25
56
1.80
42
1.35
28
0.90
14
0.45
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.00
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_{J (max.)} = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1030-Rev. B, 12-May-14
5
Document Number: 68785
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