SI7748DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.025
10
T_J = 150 °C
1
T_J = 25 °C
0.020
0.015
Si7748DP
Vishay Siliconix
I_D = 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-1
0.010
0.005
T_J = 125 °C
T_J = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
10^-2
160
30 V
10^-3
120
20 V
10^-4
80
10 V
10^-5
40
10^-6
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1000
100
I_DM Limited
I_D Limited
10
Limited by R_DS(on)*
1
100 us
1 ms
10 ms
100 ms
0.1
0.01
0.01
T_C = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-1030-Rev. B, 12-May-14
4
Document Number: 68785
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000