TCMT4100 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Half Pitch Mini-Flat Package

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TCMT4100, TCMT4106
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Climatic classification
According to IEC 68 part 1
40 / 110 / 21
Comparative tracking index
CTI
175
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Apparent charge test voltage (method A)
Apparent charge test voltage (method B)
Isolation resistance
Isolation resistance (under fault conditions)
Output safety power
Input safety current
Input safety temperature
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
t = 1 min
V_IORM x 1.6 = V_PR, type and sample test,
t_m = 60 s, partial discharge < 5 pC
V_IORM x 1.875 = V_PR, 100 % production test
with t_m = 1 s, partial discharge < 5 pC
V_IO = 500 V_DC, T_amb = 100 °C
V_IO = 500 V_DC, T_amb = T_SI
V_ISO
V_IOTM
V_IORM
V_PR
V_PR
R_IO
R_IO
P_SO
I_SI
T_SI
Per IEC 60950 2.10.5.1
DTI
3750
6000
707
1132
1326
10¹¹
10⁹
265
130
150
5
5
 0.4
V_RMS
V
V
V_peak
V_peak


mW
mA
°C
mm
mm
mm
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
100
IR-diode
50
0
0 20 40 60 80 100 120
T_amb - Ambient Temperature (°C)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
100
T_amb = 110 °C
T_amb = 75 °C
T_amb = 25 °C
10 ^{Tamb = 0 °C}
T_amb = -55 °C
1
0.1
0.6 0.8 1.0 1.2 1.4 1.6
V_F - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Rev. 1.1, 19-Jan-16
4
Document Number: 84181
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