SUP90N03 Datasheet, PDF (4/7 Pages) Vishay Telefunken – N-Channel 30-V (D-S) MOSFET

SUP90N03-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.6
100
V_GS = 10 V, I_D = 28.8 A
V_GS = 4.5 V, I_D = 27 A
1.4
10
1.2
1
T _J = 150 °C
T _J = 25 °C
1.0
0.1
0.8
0.01
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.005
0.004
I_D = 28.8 A
T_A = 125 °C
0.003
0.002
T_A = 25 °C
0.001
0
0.2
0.4
0.6
0.8
1
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
2.8
2.4
I_D = 250 µA
2.0
1.6
0.001
1.2
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
R_DS(on) vs. V_GS vs. Temperature
1000
*Limited by r_{DS (on)}
100
0.8
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
10
10 ms
100 ms
1
1s
10 s
0.1
dc
0.01
T_A = 25 °C
Single Pulse
0.001
0.1
*V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74341
4
S12-0683-Rev. B, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000