SUP90N03 Datasheet, PDF (1/7 Pages) Vishay Telefunken – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
SUP90N03-03
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) ()
0.0029 at V_GS = 10 V
0.0033 at V_GS = 4.5 V
TO-220AB
I_D (A)^{a, e}
90
90
Q_g (Typ)
82 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
D
• DC/DC
G
DRAIN connected to TAB
GDS
Top View
Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
90^{a, e}
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
90^e
28.8^{b, c}
A
T_A = 70 °C
27^{b, c}
Pulsed Drain Current
I_DM
90
Avalanche Current Pulse
Single Pulse Avalanche Energy
I_AS
36
L = 0.1 mH
E_AS
64.8
V
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
90^{a, e}
3.13^{b, c}
A
T_C = 25 °C
250^a
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
175
3.75^{b, c}
W
T_A = 70 °C
2.63^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case
t  10 sec
R_thJA
32
Steady State
R_thJC
0.5
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Max.
40
0.6
Unit
°C/W
Document Number: 74341
For more information please contact: [e-mail]
www.vishay.com
S12-0683-Rev. B, 26-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000