SUP50N03 Datasheet, PDF (4/7 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

SUP50N03-5m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.1
T_J = 150 °C
10
T_J = 25 °C
1
1.7
I_D = 250 μA
1.3
0.9
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3750
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
43
3000
C_iss
2250
41
I_D = 250 μA
39
1500
C_oss
750
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 20 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
37
35
33
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
80
60
Package Limited
40
0.8
20
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
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Document Number: 66570
4
S13-2232-Rev. B, 28-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000