SUP50N03 Datasheet, PDF (1/7 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

SUP50N03-5m1P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.0051 at V_GS = 10 V
30
0.0063 at V_GS = 4.5 V
I_D (A)
50^d
50^d
Q_g (Typ.)
21.7
TO-220AB
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
D
GD S
Top View
Ordering Information:
SUP50N03-5m1P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
I_D
50^d
50^d
A
I_DM
100
Avalanche Current
I_AS
40
Single Avalanche Energy^a
L = 0.1 mH
E_AS
80
mJ
Maximum Power Dissipation^a
T_C = 25 °C
59.5^b
T_A = 25 °C^c
P_D
2.7
W
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R_thJA
R_thJC
Limit
46
2.1
Unit
°C/W
Document Number: 66570
For technical questions, contact: [e-mail]
www.vishay.com
S13-2232-Rev. B, 28-Oct-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000