SUD40N08-16 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 80-V (D-S) 175 Degree Celcious MOSFET

SUD40N08-16
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
V_GS = 10 V
2.0
I_D = 40 A
10
1.6
Source-Drain Diode Forward Voltage
T_J = 150_C
1.2
1
T_J = 25_C
0.8
0.1
0.4
0.0
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
50
0.01
0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
1000
Safe Operating Area
40
100
Limited by r_DS(on)
10 ms
30
100 ms
10
20
1 ms
10 ms
1
100 ms
10
T_C = 25_C
1 s, dc
Single Pulse
0
0
25 50 75 100 125 150 175
T_C − Case Temperature (_C)
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^−4
10^−3
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4
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
10
30
Document Number: 71323
S-40272—Rev. C, 23-Feb-04