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| SUD40N08-16 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 80-V (D-S) 175 Degree Celcious MOSFET | |||
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SUD40N08-16
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125_C
VDS = 80 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 40 A
VGS = 10 V, ID = 40 A, TJ = 125_C
VGS = 10 V, ID = 40 A, TJ = 175_C
VDS = 15 V, ID = 40 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 40 A
VDD = 40 V, RL = 1.0 W
ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = 40 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Min Typa Max Unit
80
V
2.0
4.0
"100
nA
1
50
mA
250
60
A
0.013
0.016
0.027
W
0.037
45
S
1960
370
pF
200
42
60
7
nC
13
0.5
2.7
W
12
20
52
80
ns
25
38
10
15
60
A
1.0
1.5
V
45
70
ns
www.vishay.com
2
Document Number: 71323
S-40272âRev. C, 23-Feb-04
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