SIA910EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 12-V (D-S) MOSFET

SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
I_D = 6.8 A
6
V_DS = 6 V
4
V_DS = 3 V
V_DS = 9.6 V
2
0
0
4
8
12
Q_g - Total Gate Charge (nC)
Gate Charge
1.5
1.4
V_GS = 1.8 V; I_D = 2.5 A
1.3
1.2
1.1
1.0
V_GS = 4.5 V, 2.5 V; I_D = 5.5 A
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.08
10
T_J = 150 °C
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.06
0.04
I_D = 2.5 A; T_J = 125 °C
I_D = 5.2 A; T_J = 125 °C
0.02
I_D = 2.5 A;
T_J = 25 °C
I_D = 5.2 A; T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
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Document Number: 65535
4
S13-0460-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000