SIA910EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 12-V (D-S) MOSFET

SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4
T_J = 25 °C
3
2
1
0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10-2
10-3
10-4
10-5
10-6
T_J = 150 °C
10-7
10-8
T_J = 25 °C
10-9
10-10
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
10
V_GS = 5 V thru 2 V
16
8
12
V_GS = 1.5 V
6
8
4
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
4
2
0
0.0
800
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.04
0.02
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
600
400
200 ^Crss
C_iss
C_oss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 65535
For technical questions, contact: [e-mail]
www.vishay.com
S13-0460-Rev. B, 04-Mar-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000