SIA444DJT Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
0.04
I_D = 7.4 A
10
T_J = 150 °C
T_J = 25 °C
0.03
0.02
1
0.01
SiA444DJT
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 50 - 25
I_D = 250 μA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
10
100 μs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0071-Rev. D, 19-Jan-15
4
Document Number: 67056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000