SIA416DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T_J = 150 °C
0.40
0.32
I_D = 3.2 A
0.24
1
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.7
2.5
2.3
2.1
I_D = 250 μA
1.9
1.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.16
T_J = 125 °C
0.08
T_J = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
0.1
0.01
0.1
10 ms
T_A = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63649
4
S12-2438-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000