SIA416DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
V_GS = 10 V thru 6 V
V_GS = 5 V
16
8
SiA416DJ
Vishay Siliconix
12
6
8
V_GS = 4 V
4
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
4
2
0
0
500
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
0.12
0.08
V_GS = 4.5 V
V_GS = 10 V
400
C_iss
300
200
C_oss
0.04
0
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.8 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 80 V
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
100
0
0
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 3.2 A
1.6
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63649
For technical questions, contact: [e-mail]
www.vishay.com
S12-2438-Rev. B, 15-Oct-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000