SIA408DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SiA408DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
0.10
T_J = 150 °C
0.08
10
0.06
0.04
T_J = 25 °C
0.02
I_D = 5.3 A
T_J = 125 °C
T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.6
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
1.4
I_D = 250 µA
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
0.01
0.1
1
DC
BVDSS Limited
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69255
S10-2546-Rev. D, 08-Nov-10