SIA408DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
20
V_GS = 10 V thru 3 V
16
16
SiA408DJ
Vishay Siliconix
12
12
8
2V
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 7.8 A
8
V_DS = 15 V
6
V_DS = 24 V
4
8
T_C = 125 °C
4
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 5.3 A
1.4
1.2
1.0
2
0.8
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69255
S10-2546-Rev. D, 08-Nov-10
www.vishay.com
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