SI7858BD Datasheet, PDF (4/13 Pages) Vishay Telefunken – N-Channel 12 V (D-S) MOSFET

New Product
Si7858BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.015
10
T_J = 150 °C
1
0.012
0.009
I_D = 15 A
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.006
0.003
T_J = 125 °C
T_J = 25 °C
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
250
0.2
200
0
- 0.2
- 0.4
150
I_D = 5 mA
100
I_D = 250 μA
50
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1
1s
10 s
0.1
T_A = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 66589
S10-1045-Rev. A, 03-May-10