SI7858BD Datasheet, PDF (3/13 Pages) Vishay Telefunken – N-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
5
V_GS = 5 V thru 1.5 V
56
4
Si7858BDP
Vishay Siliconix
42
3
T_C = 25 °C
28
2
14
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0038
1
0
0.0
8000
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0034
0.0030
V_GS = 1.8 V
6400
C_iss
4800
0.0026
V_GS = 2.5 V
0.0022
V_GS = 4.5 V
0.0018
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
I_D = 10 A
6.4
V_DS = 4 V
4.8
V_DS = 6 V
V_DS = 8 V
3.2
1.6
3200
1600 ^Crss
C_oss
0
0.0
2.4
4.8
7.2
9.6
12.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 15 A
1.3
V_GS = 2.5 V
V_GS = 4.5 V
1.1
0.9
0.0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66589
S10-1045-Rev. A, 03-May-10
www.vishay.com
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