SI7772DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si7772DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
T_J = 150 °C
1
T_J = 25 °C
0.05
I_D = 15 A
0.04
0.03
0.1
0.02
T_J = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-1
0.01
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
10^-2
64
10^-3
30 V
48
10^-4
10 V
32
10^-5
20 V
16
10^-6
10^-7
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09