SI7772DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
V_GS = 10 V thru 4 V
40
8
Si7772DP
Vishay Siliconix
30
6
20
V_GS = 3 V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0165
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.0150
0.0135
V_GS = 4.5 V
1200
C_iss
900
0.0120
0.0105
V_GS = 10 V
0.0090
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 15 V
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
600
300
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
1.6
1.4
V_GS = 10 V
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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