SI6968BE Datasheet, PDF (4/11 Pages) Vishay Telefunken – Dual N-Channel 2.5-V (G-S) MOSFET

Si6968BEDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
0.4
0.04
0.2
I_D = 250 µA
0.03
I_D = 6.5 A
0.02
0.0
- 0.2
0.01
- 0.4
0.00
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
0.1
T_C = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Single Pulse
10 ^-3
Notes:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 115 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-2
10 ^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
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4
Document Number: 72274
S-81221-Rev. C, 02-Jun-08