SI6968BE Datasheet, PDF (1/11 Pages) Vishay Telefunken – Dual N-Channel 2.5-V (G-S) MOSFET

Si6968BEDQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 4.5 V
20
0.030 at V_GS = 2.5 V
I_D (A)
6.5
5.5
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs
• ESD Protected: 3000 V
Pb-free
Available
RoHS*
COMPLIANT
D
D
TSSOP-8
D1
8D
S_{1 2}
7 ^S2
G₁
S_{1 3}
6 ^S2
G_{1 4}
5 ^G2
Top View
Ordering Information: Si6968BEDQ-T1
Si6968BEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
* 300 Ω
* 300 Ω
G₂
S₁
N-Channel
* Typical value by design
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
6.5
5.2
5.5
3.5
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.5
1.0
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.0
0.96
0.64
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72274
S-81221-Rev. C, 02-Jun-08
Typ.
72
100
55
Max.
83
120
70
Unit
°C/W
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