SI5902BDC Datasheet, PDF (4/11 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.20
0.16
I_D = 3.1 A
T_J = 150 °C
T_J = 25 °C
0.12
25 °C
0.08
125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
2.4
2.2
I_D = 250 µA
2.0
1.8
1.6
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by R_DS(on)*
0.04
0
50
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
R_DS(on) vs. V_GS vs. Temperature
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
10
Time (s)
Single Pulse Power
100 1000
100 µs
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4
1
1 ms
10 ms
0.1
100 ms
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
BVDSS
Limited
10
1 s, 10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10