SI5902BDC Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET
Si5902BDC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.065 at V_GS = 10 V
30
0.100 at V_GS = 4.5 V
I_D (A)
4^a
4^a
Q_g (Typ.)
2 nC
1206-8 ChipFET^® (Dual)
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S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Marking Code
CE XXX
Lot Traceability
and Date Code
Bottom View
Part #
Code
Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free)
Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
• DC/DC Converter
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
4^a
Continuous Drain Current (T_J = 150 °C)
T_C = 85 °C
T_A = 25 °C
I_D
3.8^a
3.7^{b, c}
T_A = 85 °C
2.6^{b, c}
A
Pulsed Drain Current
I_DM
10
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.6
1.3^{b, c}
T_C = 25 °C
3.12
Maximum Power Dissipation
T_C = 85 °C
T_A = 25 °C
P_D
2.0
1.5^{b, c}
W
T_A = 85 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t≤5s
R_thJA
70
Steady State
R_thJF
33
85
°C/W
40
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 120 °C/W.
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
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