SI5458DU Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
10
0.06
T_J = 150 °C
T_J = 25 °C
0.04
1
0.02
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.3
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
2.1
25
1.9
20
I_D = 250 µA
1.7
15
1.5
10
1.3
5
1.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.01
1
10
100
Time (s)
Single Pulse Power
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
100 ms
1 s, 10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65019
S09-1392-Rev. A, 20-Jul-09