SI5410DU Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

Si5410DU
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
0.035
I_D = 6.6 A
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-DrainVoltage(V)
Source-Drain Diode Forward Voltage
0.030
0.025
0.020
T_A = 125 °C
0.015
T_A = 25 °C
0.010
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.6
50
2.4
I_D = 250 µA
40
2.2
2.0
30
1.8
20
1.6
1.4
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
100 µs
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
Single Pulse
BVDSS
DC
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69827
S-81448-Rev. B, 23-Jun-08