SI5410DU Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

New Product
Si5410DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V_GS = 10 thru 4 V
25
10
T_C = - 55 °C
8
20
15
10
5
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
1800
0.022
0.019
0.016
0.013
V_GS = 4.5 V
V_GS = 10 V
0.010
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 9.8 A
8
V_DS = 20 V
6
V_DS = 32 V
4
2
1500
C_iss
1200
900
600
300
C_oss
0 ^Crss
05
10 15 20 25 30 35 40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 6.6 A
1.6
1.4
V_GS = 10 V
1.2
1.0
0.8
0
0
5
10
15
20
25
Q_g - TotalGateCharge(nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - JunctionTemperature(°C)
On-Resistance vs. Junction Temperature
Document Number: 69827
S-81448-Rev. B, 23-Jun-08
www.vishay.com
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