SI4936CD Datasheet, PDF (4/10 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET

Si4936CDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
10
0.06
T_J = 150 °C
T_J = 25 °C
0.04
1
0.02
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.3
2.1
1.9
I_D = 250 µA
1.7
1.5
1.3
1.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
16
12
8
4
0
0.001 0.01 0.1
1
10
100
Time (s)
Single Pulse Power
1000
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4
100 µA
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s, DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09