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| SI4936CD Datasheet, PDF (1/10 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET | |||
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New Product
Dual N-Channel 30-V (D-S) MOSFET
Si4936CDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 10 V
30
0.050 at VGS = 4.5 V
ID (A)d
5.8
5.5
Qg (Typ.)
2.8 nC
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
APPLICATIONS
⢠Low Current DC/DC Conversion
⢠Notebook System Power
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1
G1
Top View
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
5.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
4.6
5.0a, b
TA = 70 °C
4.0a, b
A
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
1.9
1.4a, b
TC = 25 °C
2.3
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.5
1.7a, b
W
TA = 70 °C
1.1a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t ⤠10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Typical
58
42
Maximum
75
55
Unit
°C/W
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