SIA406DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
20
V_GS = 5 V thru 1.5 V
4
15
3
10
2
5
0
0.0
0.025
V_GS = 1 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1
0
0.0
2000
SiA406DJ
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.023
0.021
V_GS = 1.8 V
0.019
0.017
0.015
0
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 10.8 A
4
V_DS = 6 V
3
V_DS = 3 V
V_DS = 9.6 V
2
1500
C_iss
1000
C_oss
500
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
V_GS = 2.5 V; I_D = 10.2 A
1.2
V_GS = 4.5 V; I_D = 10.8 A
1.0
1
0.8
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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