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SI4501BD Datasheet, PDF (2/15 Pages) Vishay Telefunken – Complementary (N- and P-Channel) MOSFET
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Si4501BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 8 V
VDS = 30 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
VDS =5 V, VGS = 10 V
VDS =- 5 V, VGS = - 4.5 V
VGS = 10 V, ID = 10 A
VGS = - 4.5 V, ID = - 6 A
VGS = 4.5 V, ID = 7 A
VGS = - 2.5 V, ID = - 5 A
VDS = 15 V, ID = 10 A
VDS = - 15 V, ID = - 6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 10 A
Qg
VDS = - 4 V, VGS = - 8 V, ID = - 6 A
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd
VDS = - 4 V, VGS = - 4.5 V, ID = - -6 A
Gate Resistance
Rg
f = 1 MHz
Min. Typ.a Max. Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-8
34
-3
- 4.5
2.6
0.8
2
- 0.45
- 0.9
± 100
± 100
1
-1
5
-5
20
- 20
0.0135 0.017
0.021 0.027
0.016 0.020
0.029 0.037
29
24
V
mV/°C
V
nA
µA
A

S
N-Ch
805
P-Ch
1400
N-Ch
170
pF
P-Ch
660
N-Ch
80
P-Ch
630
N-Ch
16.5 25
P-Ch
27.5 42
N-Ch
7.9
12
P-Ch
N-Ch
16.5 25
nC
2.2
P-Ch
2.2
N-Ch
2.7
P-Ch
4.8
N-Ch 0.3 1.1 2.2

P-Ch 0.9 4.2 8.4
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2
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
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