SI4501BD Datasheet, PDF (11/15 Pages) Vishay Telefunken – Complementary (N- and P-Channel) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si4501BDY
Vishay Siliconix
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 110 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67441.
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
11