SI2302DDS Datasheet, PDF (2/8 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

Si2302DDS
Vishay Siliconix
SPECIFICATIONS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-Resistance^a
Forward Transconductance^a
Diode Forward Voltage
Dynamic^b
V_DS
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_SD
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70 °C
V_DS ≥ 10 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 3.6 A
V_GS = 2.5 V, I_D = 3.1 A
V_DS = 5 V, I_D = 3.6 A
I_S = 0.95 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Q_g
Q_gs
V_DS = 10 V, V_GS = 4.5 V, I_D = 3.6 A
Q_gd
R_g
f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
V_DD = 10 V, R_L = 2.78 Ω
I_D ≅ 3.6 A, V_GEN = 4.5 V, R_g = 1 Ω
I_F = 3.6 A, dI/dt = 100 A/µs
Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Limits
Min.
Typ.
Max.
Unit
20
V
0.40
0.85
± 100
nA
1
µA
75
6
A
0.045 0.057
Ω
0.056 0.075
13
S
0.7
1.2
V
3.5
5.5
0.6
nC
0.45
2
4
8
Ω
8
15
7
15
30
45
ns
7
15
8.5
15
2
4
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
V_GS = 5 V thru 2 V
8
V_GS = 1.5 V
8
6
6
4
2
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
Document Number: 63653
2
S11-2528-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000