SI2302DDS Datasheet, PDF (1/8 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si2302DDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω) Max.
0.057 at V_GS = 4.5 V
0.075 at V_GS = 2.5 V
I_D (A)
2.9
2.6
Q_g (Typ.)
3.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching for Portable Devices
• DC/DC Converter
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302DDS (O2)*
* Marking Code
Ordering Information: Si2302DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (t = 300 µs)^b
T_A = 25 °C
T_A = 70 °C
I_D
2.9
2.6
2.3
2.1
A
I_DM
10
Continuous Source Current (Diode Conduction)^a
I_S
0.72
0.6
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.86
0.71
0.55
0.46
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
120
140
62
Maximum
145
175
78
Unit
°C/W
Document Number: 63653
www.vishay.com
S11-2528-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000