BFP93A Datasheet, PDF (2/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

BFP93A/BFP93AW
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 15 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0
Collector-emitter saturation voltage I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 30 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
10 mA
V_(BR)CEO 12
V
V_CEsat
0.1 0.4 V
h_FE
40 90 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
V_CE = 5 V, I_C = 30 mA, f = 500 MHz
V_CB = 10 V, f = 1 MHz
V_CE = 10 V, f = 1 MHz
W ^{VEB = 0.5 V, f = 1 MHz}
V_CE = 8 V, Z_S = 50 , f = 800 MHz,
W ^{IC = 5 mA}
V_CE = 8 V, Z_S = 50 , f = 800 MHz,
W ^{IC = 25 mA}
V_CE = 8 V, Z_S = 50 , Z_L = Z_Lopt,
W ^{IC = 25 mA, f = 800 MHz}
V_CE = 8 V, Z_S = 50 , Z_L = Z_Lopt,
I_C = 25 mA, f = 2 GHz
V_CE = 8 V, I_C = 25 mA, d_IM = 60 dB,
W ^{f1 = 806 MHz, f2 = 810 MHz,}
Z_S = Z_L = 50
V_CE = 8 V, I_C = 25 mA, f = 800 MHz
Symbol Min Typ Max Unit
f_T
6
GHz
C_cb
0.45
pF
C_ce
0.2
pF
C_eb
1.25
pF
F
1.6
dB
F
2.1
dB
G_pe
17
dB
G_pe
10
dB
V₁ = V₂
260
mV
IP₃
31
dBm
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2 (10)
Document Number 85020
Rev. 3, 20-Jan-99