BFP93A Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

Silicon NPN Planar RF Transistor
BFP93A/BFP93AW
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D High power gain
D Low noise figure
D High transition frequency
21
21
94 9279
13 579
3
4
BFP93A Marking: FE
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 653
34
13 566
BFP93AW Marking: WFE
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
T_amb ≤ 60 °C
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
20
V
12
V
2
V
50
mA
200
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm³
R_thJA
450
K/W
plated with 35mm Cu
Document Number 85020
Rev. 3, 20–Jan-99
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