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SI7998DP Datasheet, PDF (10/18 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
www.vishay.com
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
50
Si7998DP
Vishay Siliconix
40
60
30
40
Package Limited
20
20
10
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1941-Rev. C, 29-Sep-14
10
Document Number: 68970
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000