SI7998DP Datasheet, PDF (1/18 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

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Si7998DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
30
R_DS(on) (Ω)
0.0093 at V_GS = 10 V
0.0124 at V_GS = 4.5 V
0.0053 at V_GS = 10 V
0.0070 at V_GS = 4.5 V
I_D (A) ^a
25
25
30
30
Q_g (TYP.)
8.2 nC
15.3 nC
FEATURES
• TrenchFET^® power MOSFET
• PWM optimized
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK^® SO-8 Dual
D₁
D_{1 8}
D_{2 7}
D_{2 6}
5
APPLICATIONS
• System Power DC/DC
D₁
D₂
6.15 _mm
1
Top View
5.15 ^mm
1
2 S₁
3 G₁
4 S₂
G₂
Bottom View
Ordering Information:
Si7998DP-T1-GE3 (Lead (Pb)-free and halogen-free)
G₁
N-Channel MOSFET _S1
G₂
N-Channel MOSFET _S2
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) ^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
30
± 20
± 20
25 ^a
30 ^a
25 ^a
30 ^a
15 ^{b, c}
21 ^{b, c}
12 ^{b, c}
17 ^{b, c}
60
80
19
30 ^a
3 ^{b, c}
3.3 ^{b, c}
25
40
31
80
22
40
14
25
3.6 ^{b, c}
4 ^{b, c}
2.3 ^{b, c}
2.5 ^{b, c}
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1 CHANNEL-2
TYP. MAX. TYP. MAX.
UNIT
Maximum Junction-to-Ambient ^{b, f}
Maximum Junction-to-Case (Drain)
Notes
t ≤ 10 s
Steady State
R_thJA
R_thJC
26
35
22
31
4
5.5
2.2
3.1
°C/W
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel-1 and channel-2 is 80 °C/W.
S14-1941-Rev. C, 29-Sep-14
1
Document Number: 68970
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000