SUD50N04 Datasheet, PDF (1/9 Pages) Vishay Telefunken – N-Channel 40-V (D-S) MOSFET

SUD50N04-8m8P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
40
0.0088 at V_GS = 10 V
0.0105 at V_GS = 4.5 V
I_D (A)^a
50
50
Q_g (Typ.)
16 nC
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
• 100 % R_g Tested
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• LCD Display Backlight Inverters
• DC/DC Converters
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
T_C = 25 °C
50^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
44
14^b
Pulsed Drain Current
T_A = 70 °C
11.2^b
A
I_DM
100
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
40
2.6^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
T_C = 25 °C
48.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
30.8
3.1^b
W
T_A = 70 °C
2.0^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
Symbol
R_thJA
R_thJC
Typical
32
2.1
Maximum
40
2.6
Unit
°C/W
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