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U6268B Datasheet, PDF (7/12 Pages) TEMIC Semiconductors – Side-Airbag Sensor Dual Interface
U6268B
Parameters
Test Conditions / Pins
Symbol Min. Typ. Max. Unit
Voltage threshold CLL- CLLx low-level voltage threshold
VCLL_L
1.75
comparator
CLLx high-level voltage threshold
VCLL_H
1.43
Voltage hysteresis
VCLL_hys
0.26
Minimal voltage at
OCMx
Current-limitation level
Overcurrent-detection
level
Current limitation minus
overcurrent detection
IOUT = 0 to 5 mA
v VS 40 V OUTx short to GND
v VS 40 V
VOCM_lim – VOCM_over
VOCM_min
VOCM_lim
4.3
VOCM_det
4.2
D_lim_OCM 0.15
2.4
V
1.9
V
0.6
V
0.5
V
5.3
V
4.9
V
0.5
V
Intern. pull-down current
Function RETURN1, RETURN2
IOCM_sink
0.1
0.45 mA
Enable high saturation
voltage
Dynamic resistance
Current limitation
RETURNx is always
higher than current
limitation OUTx
IRETURN = 50 mA
w dI 10 mA
Enable high, VRETURNx = 2 V
v Enable high, VRETURNx 18 V
v Enable low VRETURNx 18 V
Vret_sat
Rret
2
Iret_lim
60
Iret_lim
70
Iret_lim
0.8
0.5
V
8
W
150 mA
200 mA
2
mA
Overcurrent-detection
level
Delay time
CRETURN = 47 nF
Threshold comparator, switch-off
return
Threshold comparator, switch-on
return
Hysteresis
Switching on IRETURN at 50 mA
Switching off IRETURN at 1 mA
Function CLL1, CLL2 (CLLx with 2 kW to 5 V)
IOUT threshold CLL
comparator
ROCM = 750 W
CLL low-level threshold
CLL high-level threshold
CLL saturation voltage
CLL leakage current
Hysteresis
v ICLL 2.5 mA
v VCLL 6.5 V
Response time to current
change
IOUT to CLL rise
IOUT to CLL fall
Max. difference between rise and
fall time
CLL output switching Rise
speed
Fall
Current transmission rate
Iret_low
1.4
Iret_high
1.1
Iret_hys
0.2
tdRet_on
3
tdRet_off
30
ICLL_L
ICLL_H
ICLL_hys
VCLL_sat
ICLL_leak
tCll_rise
tCll_fall
tDĆrise-fall
tCLL_rise
tCLL–fall
23.3
19.1
3.5
0.1
0.1
60
2
V
1.5
V
0.7
V
30
ms
90
ms
27.3 mA
22.3 mA
8.2 mA
0.4
V
1
mA
2
ms
2
ms
1
ms
1
ms
1
ms
kHz
Current transmission
3 dB bandwidth
500
kHz
Function ENABLE1, ENABLE2
Enable low–level
threshold
VEnable_off
2
6.5
V
Enable high-level
threshold
VEnable_on –0.3
0.8
V
TELEFUNKEN Semiconductors
7 (12)
Rev. A1, 21-May-97
Preliminary Information