BUF744 Datasheet, PDF (6/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF744
10
saturated switching
8
R-load
I_C = 1.5A, I_B1 = 0.3A
6
T_j = 125°C
4
2
T_j = 25°C
0
0
1
2
3
4
94 9215
–I_B2 / I_B1
Figure 10. t_s vs. –I_B2/I_B1
10
saturated switching
R-load
8
I_C = 3A, I_B1 = 0.6A
6
T_j = 125°C
4
2
T_j = 25°C
0
0
1
2
3
4
94 9211
–I_B2 / I_B1
Figure 11. t_s vs. –I_B2/I_B1
10
unsaturated (Baker clamp)
8 ^R-load
I_C = 3A, I_B1 = 0.6A
6
4
T_j = 125°C
2
0 ^{Tj = 25°C}
0
1
2
3
4
94 9213
–I_B2 / I_B1
Figure 12. t_s vs. –I_B2/I_B1
6 (9)
1.0
saturated switching
R-load
0.8 _{IC = 1.5A, IB1 = 0.3A}
0.6
T_j = 125°C
0.4
0.2
T_j = 25°C
0
0
1
2
3
4
94 9216
–I_B2 / I_B1
Figure 13. t_f vs. –I_B2/I_B1
1.0
0.8
T_j = 125°C
0.6
saturated switching
R-load
I_C = 3A, I_B1 = 0.6A
0.4
0.2
T_j = 25°C
0
0
1
2
3
4
94 9214
–I_B2 / I_B1
Figure 14. t_f vs. –I_B2/I_B1
1.0
unsaturated (Baker clamp)
0.8
R-load
I_C = 3A, I_B1 = 0.6A
0.6
0.4
T_j = 125°C
0.2
T_j = 25°C
0
0
1
2
3
4
94 9212
–I_B2 / I_B1
Figure 15. t_f vs. –I_B2/I_B1
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97