BUF744 Datasheet, PDF (3/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF744
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
I_C = 3 A; I_B1 = 0.7 A; –I_B2 = 1.5 A;
t_on
Storage time
V_S = 125 V
t_s
Fall time
t_f
Inductive load (figure 3)
0.85 1.2
ms
1
1.7
ms
0.15 0.3
ms
Storage time
Fall time
Storage time
Fall time
I_C = 3 A; I_B1 = 0.7 A; –I_B2 = 1.5 A;
t_s
V_S = 125 V; V_clamp = 300 V;
–V_BE = 5 V; L = 200 mH; T_case = 25°C
t_f
I_C = 3 A; I_B1 = 0.7 A; –I_B2 = 1.5 A;
t_s
V_S = 125 V; V_clamp = 300 V;
–V_BE = 5 V; L = 200 mH; T_case = 100°C
t_f
1.5
2.5
ms
0.1
0.2
ms
2
ms
0.14
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
TELEFUNKEN Semiconductors
3 (9)
Rev. A2, 18-Jul-97