BUF636A Datasheet, PDF (6/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF636A
10
saturated switching
R–load
8
I_C = 0.8A, I_B1 = 0.1A
6
T_case = 125°C
4
2
0
0
2
95 10517
25°C
4
6
–I_B2/I_B1
8
10
Figure 10. t_s vs. –I_B2/I_B1
10
saturated switching
R–load
8
I_C = 0.8A, I_B1 = 0.2A
6
T_case = 125°C
4
2
25°C
0
0
0.8
1.6
2.4
3.2 4.0
95 10515
–I_B2/I_B1
Figure 11. t_s vs. –I_B2/I_B1
1.0
saturated switching
R–load
0.8
I_C = 0.8A, I_B1 = 0.1A
0.6
T_case = 125°C
0.4
0.2
25°C
0
0
2
95 10516
4
6
–I_B2/I_B1
8
10
Figure 12. t_f vs. –I_B2/I_B1
1.0
saturated switching
R–load
0.8
I_C = 0.8A, I_B1 = 0.2A
0.6
T_case = 125°C
0.4
0.2
25°C
0
0
0.8
1.6
2.4
3.2 4.0
95 10514
–I_B2/I_B1
Figure 13. t_f vs. –I_B2/I_B1
6 (8)
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97