BUF636A Datasheet, PDF (5/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF636A
Typical Characteristics (T_case = 25_C unless otherwise specified)
6
5
4
3
2 ^{0.1 x IC < IB2 < 0.5 x IC}
V_CEsat < 2V
1
100
12.5 K/W
10
2.5 K/W
1
25 K/W
50 K/W
0.1
R_thJA = 85 K/W
0.01
0
0
95 10508
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
Figure 4. V_CEW – Diagram
0.001
0
95 10525
25 50 75 100 125 150
T_case – Case Temperature ( °C )
Figure 7. P_tot vs.T_case
5
10
I_B = 490 mA
1A
400 mA
4
3A
I_C = 4A
290 mA
0.6A
1
2A
190 mA
3
95 mA
2
0.1
49 mA
1
0
0
95 10512
4
8
12
16
20
V_CE – Collector Emitter Voltage ( V )
Figure 5. I_C vs. V_CE
0.01
0.01
95 10513
0.1
1
10
I_B – Base Current ( A )
Figure 8. V_CEsat vs. I_B
100
100
25V
10V
10
5V
V_CE = 2V
T_j = 125°C
75°C
25°C
10
1
0.001 0.01
0.1
1
10
95 10510
I_C – Collector Current ( A )
Figure 6. h_FE vs. I_C
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
1
0.001 0.01
0.1
1
10
95 10511
I_C – Collector Current ( A )
Figure 9. h_FE vs. I_C
5 (8)