BUF742 Datasheet, PDF (5/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF742
Typical Characteristics (T_case = 25_C unless otherwise specified)
6
5
4
0.1 x I_C < I_B2 < 0.5 x I_C
3
V_CEsat < 2 V
2
1
100.00
10.00
2.5K/W
12.5K/W
1.00
25K/W
50K/W
0.10
R_thJA=85K/W
0
0
13706
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
0.01
0
13707
25 50 75 100 125 150
T_case – Case Temperature ( °C )
Figure 4. V_CEW – Diagram
Figure 7. P_tot vs.T_case
5.0
0.6A
4.5
0.5A
4.0
0.4A
3.5
0.3A
3.0
0.2A
2.5
2.0
1.5
I_B=0.1A
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10 11
13708
V_CE – Collector Emitter Voltage ( V )
Figure 5. I_C vs. V_CE
10.00
1.00
5A
3A
2A
0.10
1A
I_C=0.5A
0.01
0.01
13709
0.10
1.00
I_B – Base Current ( A )
Figure 8. V_CEsat vs. I_B
10.00
100
100
T_j = 125°C
10
13710
1
0.01
10V
5V
V_CE=2V
0.10
1.00
I_C – Collector Current ( A )
Figure 6. h_FE vs. I_C
10.00
75°C
25°C
10
V_CE=2V
1
0.01
0.10
1.00
13711
I_C – Collector Current ( A )
Figure 9. h_FE vs. I_C
10.00
TELEFUNKEN Semiconductors
5 (8)
Rev. A2, 18-Jul-97