BUF742 Datasheet, PDF(2/8 Page) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BUF742 Datasheet, PDF (2/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

◁

BUF742

Electrical Characteristics

Tcase = 25Â°C, unless otherwise specified

Parameter

Test Conditions

Collector cut-off current

Collector-emitter breakdown

voltage (figure 1)

Emitter-base breakdown voltage

Collector-emitter saturation

voltage

Base-emitter saturation voltage

DC forward current transfer ratio

Collector-emitter working voltage

Dynamic saturation voltage

Gain bandwidth product

VCE = 900 V

VCE = 900 V; Tcase = 150Â°C

IC = 500 mA; L = 125 mH;

Imeasure = 100 mA

IE = 1 mA

IC = 0.8 A; IB = 0.2 A

IC = 2.5 A; IB = 0.8 A

IC = 0.8 A; IB = 0.2 A

IC = 2.5 A; IB = 0.8 A

VCE = 2 V; IC = 10 mA

VCE = 2 V; IC = 0.8 A

VCE = 2 V; IC = 2.5 A

VCE = 2 V; IC = 5 A

VS = 50 V; L = 1 mH; IC = 2.5 A;

IB1 = 0.5 A; âIB2 = 0.5 A;

âVBE(off) = 5 V

IC = 2.5 A; IB = 0.5 A; t = 1 ms

IC = 2.5 A; IB = 0.5 A; t = 3 ms

IC = 200 mA; VCE = 10 V;

f = 1 MHz

Symbol Min

ICES

V(BR)CEO 400

V(BR)EBO 11

VCEsat

VBEsat

hFE

VCEW 500

VCEsatdyn

Typ Max Unit

10 mA

200 mA

0.2 V

0.4 V

1.2 V

7 12 V

1.5 3 V

MHz

2 (8)

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

▷