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DG183 Datasheet, PDF (3/8 Pages) TEMIC Semiconductors – High-Speed Drivers with Dual DPST JFET Switches
DG183/184/185
Specificationsa for DG183
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 V or 2 Vf
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Source Off
Leakage Current
VANALOG
rDS(on)
IS(off)
IS = –10 mA, VD = –7.5 V
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
VS = "7.5 V, VD = #7.5 V
Drain Off
Leakage Current
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
VS = "7.5 V, VD = #7.5 V
Channel On
Leakage Current
Saturation Drain Current
Digital Input
ID(on)
IDSS
VD = VS = "7.5 V
2 ms Pulse Duration
Input Current with
Input Voltage High
IINH
Input Current with
Input Voltage Low
IINL
VIN = 5 V
VIN = 0 V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
Power Supplies
ton
toff
CS(off)
CD(off)
CD(on)
OIRR
See Switching Time Test Circuit
VS = –5 V, ID = 0
f = 1 MHz VD = –5 V, IS = 0
VD = VS = 0 V
f = 1 MHz, RL = 75 W
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
IL
Reference Supply Current
IR
VIN = 0 V, or 5 V
Tempb Typc
Full
Room 7.5
Full
Room 0.05
Hot
Room 0.05
Hot
Room 0.04
Hot
Room 0.03
Hot
Room –0.1
Hot
Room 300
Room <0.01
Hot
Full
–30
Room 240
Room 140
Room 21
Room 17
Room 17
Room >55
Room 0.6
Room –2.7
Room 3.1
Room –1
A Suffix
–55 to 125_C
B Suffix
–25 to 85_C
Mind Maxd Mind Maxd Unit
–7.5 15 –7.5 15
V
10
20
15
25
W
10
15
1000
300
10
15
1000
300
10
1000
15
300
nA
10
15
1000
300
–2
–200
–10
–200
mA
10
10
20
20
mA
–250
–250
400
600
ns
200
220
pF
dB
1.5
1.5
–5
–5
mA
4.5
4.5
–2
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Siliconix
3
S-52895—Rev. D, 16-Jun-97