BUD600 Datasheet, PDF (3/9 Pages) TEMIC Semiconductors – Silicon NPN Hugh Voltage Switching Transistor

BUD600
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
Storage time
I_C = 0.3 A; I_B1 = 0.1 A; –I_B2 = 0.2 A;
t_on
V_S = 250 V
t_s
Fall time
t_f
Turn on time
Storage time
I_C = 1 A; I_B1 = 0.2 A; –I_B2 = 0.5 A;
t_on
V_S = 250 V
t_s
Fall time
t_f
Inductive load (figure 3)
0.15 0.3
ms
1.6
2
ms
0.5
0.6
ms
0.25 0.5
ms
0.8
1
ms
0.15 0.25
ms
Storage time
Fall time
Storage time
Fall time
I_C = 0.3 A; I_B1 = 0.1 A; –I_B2 = 0.2 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
I_C = 1 A; I_B1 = 0.2 A; –I_B2 = 0.5 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
1.6
2
ms
0.3
0.45
ms
0.8
1
ms
0.1
0.15
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
TELEFUNKEN Semiconductors
3 (9)
Rev. B2, 18-Jul-97